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Abstract Strain modulation is a crucial way in engineering nanoscale materials. It is even more important for single photon emitters in layered materials, where strain can trap a delocalized exciton, leading to quantum emission. Herein, we apply strain by using the piezoelectric relaxor ferroelectric substrate. In addition to the strain-tuning of energy and polarization, we report on new observations, including the enhanced polarizability and tunable diamagnetic shift, from the charged localized excitons. As indicated from the polarization-resolved measurements, we attribute the formation of charged localized excitons to selenium vacancy defects. The shallow defect trap, supported by the value of g-factor, further allows for strain-modulation of the electron-hole overlap, hence resulting in the tunable diamagnetic shift. Our results provide a new perspective in integrating layered materials with functional substrates. The contrasting features observed from the charged localized excitons also signify the prospect of charged localized emitters for quantum science and technology. 

We fabricate and measure electrically-gated tunnel junctions in which the insulating barrier is a sliding van der Waals ferroelectric made from parallel-stacked bilayer hexagonal boron nitride and the electrodes are single-layer graphene. Despite the nominally-symmetric tunnel-junction structure, these devices can exhibit substantial electroresistance upon reversing the ferroelectric polarization. The magnitude and sign of tunneling electroresistance are tunable by bias and gate voltage. We show that this behavior can be understood within a simple tunneling model that takes into account the quantum capacitance of the graphene electrodes, so that the tunneling densities of states in the electrodes are separately modified as a function of bias and gate voltage. 

Abstract AB-stacked bilayer graphene has emerged as a fascinating yet simple platform for exploring macroscopic quantum phenomena of correlated electrons. Under large electric displacement fields and near low-density van-Hove singularities, it exhibits a phase with features consistent with Wigner crystallization, including negative dR/dT and nonlinear bias behavior. However, direct evidence for the emergence of an electron crystal at zero magnetic field remains elusive. Here, we explore low-frequency noise consistent with depinning and sliding of a Wigner crystal or solid. At large magnetic fields, we observe enhanced noise at low bias current and a frequency-dependent response characteristic of depinning and sliding, consistent with earlier scanning tunnelling microscopy studies confirming Wigner crystallization in the fractional quantum Hall regime. At zero magnetic field, we detect pronounced AC noise whose peak frequency increases linearly with applied DC current—indicative of collective electron motion. These transport signatures pave the way toward confirming an anomalous Hall crystal. 

Abstract Graphene is a privileged 2D platform for hosting confined light-matter excitations known as surface plasmon polaritons (SPPs), as it possesses low intrinsic losses and a high degree of optical confinement. However, the isotropic nature of graphene limits its ability to guide and focus SPPs, making it less suitable than anisotropic elliptical and hyperbolic materials for polaritonic lensing and canalization. Here, we present graphene/CrSBr as an engineered 2D interface that hosts highly anisotropic SPP propagation across mid-infrared and terahertz energies. Using scanning tunneling microscopy, scattering-type scanning near-field optical microscopy, and first-principles calculations, we demonstrate mutual doping in excess of 10¹³cm^–2holes/electrons between the interfacial layers of graphene/CrSBr. SPPs in graphene activated by charge transfer interact with charge-induced electronic anisotropy in the interfacial doped CrSBr, leading to preferential SPP propagation along the quasi-1D chains that compose each CrSBr layer. This multifaceted proximity effect both creates SPPs and endows them with anisotropic propagation lengths that differ by an order-of-magnitude between the in-plane crystallographic axes of CrSBr.